🏷️ Advancements in Semiconductor Devices and Circuit Design
Statistics
| Level | 3 |
| Department | - |
| IIT Delhi Publications | 298 |
| Global Publications | 0 |
Top Researchers
- V. Ramgopal Rao (H: 45)
- Samaresh Das (H: 33)
- A. K. Kapoor (H: 29)
- Abhisek Dixit (H: 23)
- Oscar D. Restrepo (H: 17)
- Madhusudan Singh (H: 16)
- Sujata Sen (H: 16)
- Valipe Ramgopal Rao (H: 13)
- Ankur Kumar Gupta (H: 12)
- Sushil Kumar (H: 10)
Publications in this Topic
The Physics of Semiconductor Devices
2024 • 4051 citations
Transistors based on two-dimensional materials for future integrated circuits
2021 • 992 citations
Doping-Less Tunnel Field Effect Transistor: Design and Investigation
2013 • 659 citations
Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor
2011 • 470 citations
Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain
2014 • 322 citations
Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device
2012 • 219 citations
In-Built N+ Pocket p-n-p-n Tunnel Field-Effect Transistor
2014 • 159 citations
Dielectric-Modulated Impact-Ionization MOS Transistor as a Label-Free Biosensor
2013 • 157 citations
Nanotube Junctionless FET: Proposal, Design, and Investigation
2017 • 135 citations
Insight into Lateral Band-to-Band-Tunneling in Nanowire Junctionless FETs
2016 • 117 citations
Dielectric modulated overlapping gate-on-drain tunnel-FET as a label-free biosensor
2015 • 113 citations
Compact Analytical Drain Current Model of Gate-All-Around Nanowire Tunneling FET
2014 • 111 citations
Realizing Efficient Volume Depletion in SOI Junctionless FETs
2016 • 91 citations
New dual-material SG nanoscale MOSFET: analytical threshold-voltage model
2006 • 85 citations
Extended-$\hbox{p}^{+}$ Stepped Gate LDMOS for Improved Performance
2010 • 80 citations
Junctionless Impact Ionization MOS: Proposal and Investigation
2014 • 67 citations
Evaluation of 10-nm Bulk FinFET RF Performance—Conventional Versus NC-FinFET
2018 • 66 citations