Controlling L-BTBT and Volume Depletion in Nanowire JLFETs Using Core–Shell Architecture

In this paper, we propose the use of a p+core in the core-shell nanowire (CS NW) architecture to significantly reduce the gate induced drain leakage and therefore, increase the ON-state to OFF-state current ratio (ION/IOFF) in n-NW junctionless FETs (NWJLFETs). We show that the lateral bandto-band tunneling induced parasitic bipolar junction transistor action is diminished in the CSJLFET due to an enhanced tunneling width and a higher source to channel barrier height. Further, we also demonstrate that the p+core helps to realize efficient volume depletion in NWJLFETs with large NW width. Using calibrated 3-D simulations, we show that the CSJLFET exhibits a significantly high ON-state to OFF-state current ratio (ION/IOFF) of ~107even for a channel length of 7 nm.