📄 Journal Article
New dual-material SG nanoscale MOSFET: analytical threshold-voltage model
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Abstract
A new analytical model for the surface potential and threshold voltage of a surrounding-gate MOSFET with dual-material gate is presented to investigate the short-channel effects. The model results accurately predict the threshold-voltage "roll off" for channel lengths even less than 90nm. The accuracy of the model results is verified using two-dimensional simulation.
Authors (3) 2 from IIT Delhi
Publication Details
| Type | Journal Article |
|---|---|
| Published | April 01, 2006 |
| Source | IEEE Transactions on Electron Devices |
| Publisher | Institute of Electrical and Electronics Engineers |
| Volume/Issue | Vol. 53 , Issue 4 , pp. 920-922 |
| DOI | 10.1109/ted.2006.870422 |
| OpenAlex ID | W2161370214 |
| Open Access | Closed Access |
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