Compact Analytical Model of Dual Material Gate Tunneling Field-Effect Transistor Using Interband Tunneling and Channel Transport

In this paper, we have developed a 2-D analytical model for surface potential and drain current for a long channel dual material gate (DMG) silicon-on-insulator (SoI) tunneling field-effect transistor (TFET). This model includes the effect of drain voltage, gate metal work function, oxide thickness, and silicon film thickness, without assuming a fully depleted channel. The proposed model also includes the effect of charge accumulation at the interface of the two gates and the variation in the tunneling volume with the applied gate voltage. The accuracy of the model is tested using 2-D numerical simulations. In comparison with the conventional TFET, the proposed model predicts that a DMGTFET provides a higher ON-state current (ION), a better ON-state to OFF-state current (ION/IOFF) ratio, and a better subthreshold slope.