Controlling BTBT-Induced Parasitic BJT Action in Junctionless FETs Using a Hybrid Channel

In this brief, we demonstrate for the first time that the presence of a hybrid channel, which consists of a p+layer below the n+active device layer in a junctionless (JL) FET, leads to a drastically reduced BTBT-induced parasitic BJT action. Using calibrated 2-D simulations, we show that the JLFET with a p+layer [which we call hole sink (HS)] has a significantly low OFF-state leakage current due to an increased tunneling barrier width, an enhanced source-to-channel barrier height, and a better provision for collecting the band-to-band tunneling (BTBT) generated holes, which results in a diminished parasitic BJT action in the OFF-state. Further, the proposed HS JLFET shows an extremely high ON-state to OFF-state current (ION/IOFF) ratio of ~107for a channel length of 10 nm and a significant (ION/IOFF) ratio of ~104even for a channel length of 5 nm.