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Journal

IEEE Transactions on Electron Devices

Institute of Electrical and Electronics Engineers

170
IITD Publications
0
Total Works
0
Total Citations
No
Open Access

Publications by Year

IITD Publications 22

CSV BibTeX
Nanotube Tunneling FET With a Core Source for Ultrasteep Subthreshold Swing: A Simulation Study
2019 75 citations Closed Vol. 66 No. 10 pp. 4425–4432 DOI
Spacer Design Guidelines for Nanowire FETs From Gate-Induced Drain Leakage Perspective
2017 85 citations Closed Vol. 64 No. 7 pp. 3007–3015 DOI
Physical Insights Into the Nature of Gate-Induced Drain Leakage in Ultrashort Channel Nanowire FETs
2017 74 citations Closed Vol. 64 No. 6 pp. 2604–2610 DOI
Nanotube Junctionless FET: Proposal, Design, and Investigation
2017 135 citations Closed Vol. 64 No. 4 pp. 1851–1856 DOI
Diameter Dependence of Leakage Current in Nanowire Junctionless Field Effect Transistors
2017 103 citations Closed Vol. 64 No. 3 pp. 1330–1335 DOI
Insight into Lateral Band-to-Band-Tunneling in Nanowire Junctionless FETs
2016 117 citations Closed Vol. 63 No. 10 pp. 4138–4142 DOI
Controlling L-BTBT and Volume Depletion in Nanowire JLFETs Using Core–Shell Architecture
2016 102 citations Closed Vol. 63 No. 9 pp. 3790–3794 DOI
Controlling BTBT-Induced Parasitic BJT Action in Junctionless FETs Using a Hybrid Channel
2016 74 citations Closed Vol. 63 No. 8 pp. 3350–3353 DOI
Controlling the Drain Side Tunneling Width to Reduce Ambipolar Current in Tunnel FETs Using Heterodielectric BOX
2015 152 citations Closed Vol. 62 No. 11 pp. 3882–3886 DOI
Junctionless Impact Ionization MOS: Proposal and Investigation
2014 67 citations Closed Vol. 61 No. 12 pp. 4295–4298 DOI
Compact Analytical Drain Current Model of Gate-All-Around Nanowire Tunneling FET
2014 111 citations Closed Vol. 61 No. 7 pp. 2599–2603 DOI
A Pseudo-2-D-Analytical Model of Dual Material Gate All-Around Nanowire Tunneling FET
2014 74 citations OA Vol. 61 No. 7 pp. 2264–2270 DOI
Compact Analytical Model of Dual Material Gate Tunneling Field-Effect Transistor Using Interband Tunneling and Channel Transport
2014 107 citations OA Vol. 61 No. 6 pp. 1936–1942 DOI
Doping-Less Tunnel Field Effect Transistor: Design and Investigation
2013 657 citations OA Vol. 60 No. 10 pp. 3285–3290 DOI
Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device
2012 219 citations Closed Vol. 59 No. 4 pp. 962–967 DOI
Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor
2011 470 citations OA Vol. 58 No. 2 pp. 404–410 DOI
Extended-$\hbox{p}^{+}$ Stepped Gate LDMOS for Improved Performance
2010 80 citations OA Vol. 57 No. 7 pp. 1719–1724 DOI
Compact Analytical Threshold-Voltage Model of Nanoscale Fully Depleted Strained-Si on Silicon Germanium-on-Insu lator (SGOI) MOSF…
2007 65 citations Closed Vol. 54 No. 3 pp. 554–562 DOI
New dual-material SG nanoscale MOSFET: analytical threshold-voltage model
2006 85 citations Closed Vol. 53 No. 4 pp. 920–922 DOI
Two-Dimensional Analytical Threshold Voltage Model of Nanoscale Fully Depleted SOI MOSFET With Electrically Induced S/D Extensions
2005 66 citations Closed Vol. 52 No. 7 pp. 1568–1575 DOI
Investigation of the Novel Attributes of a Fully Depleted Dual-Material Gate SOI MOSFET
2004 141 citations Closed Vol. 51 No. 9 pp. 1463–1467 DOI
Two-Dimensional Analytical Modeling of Fully Depleted DMG SOI MOSFET and Evidence for Diminished SCEs
2004 277 citations Closed Vol. 51 No. 4 pp. 569–574 DOI

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Source Details

TypeJournal
Open Access No
In DOAJ No
PublisherInstitute of Electrical and E…
ISSN0018-93831557-9646
ISSN-L0018-9383
Last Synced Oct 24, 2026
OpenAlex ID S162355128
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